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BC639RL1 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BC639RL1

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92 (TO-226)

Description

Bipolar (BJT) Transistor NPN 80 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
BC639
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Frequency - Transition
200MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Power - Max
625 mW
Series
-
Supplier Device Package
TO-92 (TO-226)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80 V

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