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Product details

2SC5819(TE12L,ZF)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: Box

Description

Bipolar (BJT) Transistor NPN 20 V 1.5 A 1 W Surface Mount PW-MINI

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 1.5 A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
Frequency - Transition: -
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Box
Package / Case: TO-243AA
Power - Max: 1 W
Series: -
Supplier Device Package: PW-MINI
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 20 V