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2N2895 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2N2895

Availability on request

Manufacturer
Solid State Inc.
Category
Transistors - Bipolar (BJT) - Single
Package
TO-18

Description

Bipolar (BJT) Transistor NPN 65 V 1 A 120MHz 500 mW Through Hole TO-18

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 100µA, 10V
Frequency - Transition
120MHz
Mfr
Solid State Inc.
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AA, TO-18-3 Metal Can
Power - Max
500 mW
Series
-
Supplier Device Package
TO-18
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
600mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)
65 V

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