MJ11013 product image

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Product details

MJ11013

Availability on request

Manufacturer: Solid State Inc.
Category: Transistors - Bipolar (BJT) - Single
Package: TO-3

Description

Bipolar (BJT) Transistor PNP - Darlington 90 V 30 A 200 W Through Hole TO-3

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 30 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: -
Mfr: Solid State Inc.
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-204AA, TO-3
Power - Max: 200 W
Series: -
Supplier Device Package: TO-3
Transistor Type: PNP - Darlington
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Voltage - Collector Emitter Breakdown (Max): 90 V