JAN2N2369AUB/TR product image

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Product details

JAN2N2369AUB/TR

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: UB

Description

Bipolar (BJT) Transistor NPN 20 V 360 mW Surface Mount UB

Datasheet Not provided

Specifications

Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Power - Max: 360 mW
Series: Military, MIL-PRF-19500/317
Supplier Device Package: UB
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20 V