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JANSR2N3057A product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANSR2N3057A

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-46

Description

Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Through Hole TO-46

Datasheet Not provided
Specifications
Base Product Number
2N3057
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AB, TO-46-3 Metal Can
Power - Max
500 mW
Series
Military, MIL-PRF-19500/391
Supplier Device Package
TO-46
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80 V

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