Vishay General Semiconductor - Diodes Division
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Product details
CAB011M12FM3
Availability on request
Description
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 105A 10mW Chassis Mount
Datasheet
Not provided
Specifications
- Current - Continuous Drain (Id) @ 25°C
- 105A
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- FET Feature
- Silicon Carbide (SiC)
- FET Type
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs
- 324nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds
- 10300pF @ 800V
- Mfr
- Wolfspeed, Inc.
- Mounting Type
- Chassis Mount
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Package
- Tray
- Package / Case
- Module
- Power - Max
- 10mW
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 100A, 15V
- Series
- WolfPACK™
- Supplier Device Package
- -
- Vgs(th) (Max) @ Id
- 3.6V @ 35mA