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BC857AQAZ product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BC857AQAZ

Availability on request

Manufacturer
NXP USA Inc.
Category
Transistors - Bipolar (BJT) - Single
Package
DFN1010D-3

Description

Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 280 mW Surface Mount DFN1010D-3

Specifications
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA, 5V
Frequency - Transition
100MHz
Mfr
NXP USA Inc.
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
3-XDFN Exposed Pad
Power - Max
280 mW
Series
Automotive, AEC-Q101
Supplier Device Package
DFN1010D-3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45 V