PDTC123EMB,315 product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

PDTC123EMB,315

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: DFN1006B-3

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount DFN1006B-3

Datasheet View datasheet

Specifications

Base Product Number: PDTC123
Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Frequency - Transition: 230 MHz
Mfr: NXP Semiconductors
Mounting Type: Surface Mount
Package: Bulk
Package / Case: 3-XFDFN
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Series: -
Supplier Device Package: DFN1006B-3
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50 V