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PUMF12,115 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

PUMF12,115

Availability on request

Manufacturer
NXP USA Inc.
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package
Bulk

Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition
100MHz
Mfr
NXP USA Inc.
Mounting Type
Surface Mount
Package
Bulk
Package / Case
6-TSSOP, SC-88, SOT-363
Power - Max
300mW
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
47kOhms
Series
-
Supplier Device Package
6-TSSOP
Transistor Type
1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50V, 40V