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Product details

2SA954-A

Availability on request

Manufacturer: NEC Corporation
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor PNP 80 V 300 mA 100MHz 600 mW Through Hole TO-92

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 300 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V
Frequency - Transition: 100MHz
Mfr: NEC Corporation
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 600 mW
Series: -
Supplier Device Package: TO-92
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max): 80 V