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BC846BM315 product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

BC846BM315

Availability on request

Manufacturer
NXP USA Inc.
Category
Transistors - Bipolar (BJT) - Single
Package
DFN1006B-3

Description

Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 250 mW Surface Mount DFN1006B-3

Specifications
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V
Frequency - Transition
100MHz
Mfr
NXP USA Inc.
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
3-XFDFN
Power - Max
250 mW
Series
Automotive, AEC-Q101
Supplier Device Package
DFN1006B-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
200mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)
65 V