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Product details

2SB1229T

Availability on request

Manufacturer
Sanyo
Category
Transistors - Bipolar (BJT) - Single
Package
3-NP

Description

Bipolar (BJT) Transistor PNP 50 V 2 A 150MHz 750 mW Through Hole 3-NP

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Frequency - Transition
150MHz
Mfr
Sanyo
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Power - Max
750 mW
Series
-
Supplier Device Package
3-NP
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50 V

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