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2N5551,412 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2N5551,412

Availability on request

Manufacturer
NXP USA Inc.
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92-3

Description

Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2N55
Current - Collector (Ic) (Max)
300 mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Frequency - Transition
300MHz
Mfr
NXP USA Inc.
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max
630 mW
Series
-
Supplier Device Package
TO-92-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
160 V

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