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2N5583 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N5583

Availability on request

Manufacturer
Solid State Inc.
Category
Transistors - Bipolar (BJT) - RF
Package
Box

Description

RF Transistor PNP 30V 500mA 1.3GHz 1W Through Hole TO-39

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 100mA, 2V
Frequency - Transition
1.3GHz
Gain
-
Mfr
Solid State Inc.
Mounting Type
Through Hole
Noise Figure (dB Typ @ f)
-
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Box
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
1W
Series
-
Supplier Device Package
TO-39
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
30V