BCR166E6327 product image

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Product details

BCR166E6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: PG-SOT23-3-11

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23-3-11

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 160 MHz
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Series: -
Supplier Device Package: PG-SOT23-3-11
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50 V