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BCR183S product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BCR183S

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package
PG-SOT23-3-11

Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 250mW Surface Mount PG-SOT23-3-11

Specifications
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Frequency - Transition
200MHz
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Package
Bulk
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
250mW
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
Series
-
Supplier Device Package
PG-SOT23-3-11
Transistor Type
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)
50V