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Product details

GE10020

Availability on request

Manufacturer
Harris Corporation
Category
Transistors - Bipolar (BJT) - Single
Package
TO-204AE

Description

Bipolar (BJT) Transistor NPN - Darlington 300 V 60 A 250 W Through Hole TO-204AE

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
60 A
Current - Collector Cutoff (Max)
250µA
DC Current Gain (hFE) (Min) @ Ic, Vce
600 @ 15A, 5V
Frequency - Transition
-
Mfr
Harris Corporation
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-204AE
Power - Max
250 W
Series
-
Supplier Device Package
TO-204AE
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
2.4V @ 1.2A, 30A
Voltage - Collector Emitter Breakdown (Max)
300 V

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