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Product details

BSM25GB120DN2

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module Half Bridge 1200 V 38 A 200 W Chassis Mount Module

Datasheet View datasheet

Specifications

Configuration: Half Bridge
Current - Collector (Ic) (Max): 38 A
Current - Collector Cutoff (Max): 800 µA
IGBT Type: -
Input: Standard
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: Module
Power - Max: 200 W
Series: -
Supplier Device Package: Module
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max): 1200 V