BC858CE6327 product image

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Product details

BC858CE6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor PNP 30 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 330 mW
Series: -
Supplier Device Package: PG-SOT23
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30 V