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BFR181E6327 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BFR181E6327

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - RF
Package
PG-SOT23

Description

RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SOT23

Specifications
Current - Collector (Ic) (Max)
20mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 5mA, 8V
Frequency - Transition
8GHz
Gain
18.5dB
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Noise Figure (dB Typ @ f)
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
175mW
Series
-
Supplier Device Package
PG-SOT23
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V