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BFR193WH6327 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BFR193WH6327

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - RF
Package
PG-SOT323-3-1

Description

RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3-1

Specifications
Current - Collector (Ic) (Max)
80mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 30mA, 8V
Frequency - Transition
8GHz
Gain
16dB
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Noise Figure (dB Typ @ f)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
SC-70, SOT-323
Power - Max
580mW
Series
Automotive, AEC-Q101
Supplier Device Package
PG-SOT323-3-1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V