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BFN19E6327HTSA1 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BFN19E6327HTSA1

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - Single
Package
PG-SOT89

Description

Bipolar (BJT) Transistor PNP 300 V 200 mA 100MHz 1 W Surface Mount PG-SOT89

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
200 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 10V
Frequency - Transition
100MHz
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-243AA
Power - Max
1 W
Series
-
Supplier Device Package
PG-SOT89
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300 V

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