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Product details

JANTXV2N2907A

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-18

Description

Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2N2907
Current - Collector (Ic) (Max)
600 mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Frequency - Transition
-
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AA, TO-18-3 Metal Can
Power - Max
500 mW
Series
Military, MIL-PRF-19500/291
Supplier Device Package
TO-18
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60 V

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