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Product details

BD550

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 110 V 7 A 150 W Through Hole TO-3

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 7 A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 4V
Mfr: Harris Corporation
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-204AA, TO-3
Power - Max: 150 W
Series: -
Supplier Device Package: TO-3
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 4A
Voltage - Collector Emitter Breakdown (Max): 110 V