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BCW67AE6327 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BCW67AE6327

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - Single
Package
PG-SOT23-3-1

Description

Bipolar (BJT) Transistor 32 V 800 mA 200MHz 330 mW Surface Mount PG-SOT23-3-1

Specifications
Current - Collector (Ic) (Max)
800 mA
Current - Collector Cutoff (Max)
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 1V
Frequency - Transition
200MHz
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
330 mW
Series
Automotive, AEC-Q101
Supplier Device Package
PG-SOT23-3-1
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
32 V