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2N5552-1 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2N5552-1

Availability on request

Manufacturer
General Semiconductor
Category
Transistors - Bipolar (BJT) - Single
Package
TO-5

Description

Bipolar (BJT) Transistor 80 V 10 A 30MHz 15 W Through Hole TO-5

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
10 A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5A, 2V
Frequency - Transition
30MHz
Mfr
General Semiconductor
Mounting Type
Through Hole
Operating Temperature
-
Package
Bulk
Package / Case
TO-205AA, TO-5-3 Metal Can
Power - Max
15 W
Series
-
Supplier Device Package
TO-5
Transistor Type
-
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80 V

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