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2N1054 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2N1054

Availability on request

Manufacturer
General Semiconductor
Category
Transistors - Bipolar (BJT) - Single
Package
TO-5

Description

Bipolar (BJT) Transistor 115 V 1 A 8MHz 5 W Through Hole TO-5

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 200mA, 6V
Frequency - Transition
8MHz
Mfr
General Semiconductor
Mounting Type
Through Hole
Operating Temperature
-
Package
Bulk
Package / Case
TO-205AA, TO-5-3 Metal Can
Power - Max
5 W
Series
-
Supplier Device Package
TO-5
Transistor Type
-
Vce Saturation (Max) @ Ib, Ic
600mV @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
115 V

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

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