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NTE51 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE51

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220

Description

Bipolar (BJT) Transistor NPN 400 V 4 A 4MHz 2 W Through Hole TO-220

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
4 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A, 5V
Frequency - Transition
4MHz
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Package
Bag
Package / Case
TO-220-3
Power - Max
2 W
Series
-
Supplier Device Package
TO-220
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400 V

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