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Product details

NTE85

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 30 V 500 mA 100MHz 625 mW Through Hole TO-92

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 100MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 625 mW
Series: -
Supplier Device Package: TO-92
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30 V