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MJE13006 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

MJE13006

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220

Description

Bipolar (BJT) Transistor NPN 300 V 8 A 4MHz 80 W Through Hole TO-220

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
8 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A, 5V
Frequency - Transition
4MHz
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Package
Bag
Package / Case
TO-220-3
Power - Max
80 W
Series
SWITCHMODE™
Supplier Device Package
TO-220
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max)
300 V

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