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NTE161 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE161

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - RF
Package
TO-72

Description

RF Transistor NPN 45V 50mA 600MHz 200mW Through Hole TO-72

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3mA, 1V
Frequency - Transition
600MHz
Gain
15dB
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Noise Figure (dB Typ @ f)
6dB @ 60MHz
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bag
Package / Case
TO-206AF, TO-72-4 Metal Can
Power - Max
200mW
Series
-
Supplier Device Package
TO-72
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
45V

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