BDV65 product image

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Product details

BDV65

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 60 V 12 A 60MHz 125 W Through Hole TO-218

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 12 A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Frequency - Transition: 60MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -
Package: Bag
Package / Case: TO-218-3
Power - Max: 125 W
Series: -
Supplier Device Package: TO-218
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: -
Voltage - Collector Emitter Breakdown (Max): 60 V