2N5551 product image

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Product details

2N5551

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 200 mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -
Package: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 625 mW
Series: -
Supplier Device Package: TO-92
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 160 V