NTE16006 product image

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Product details

NTE16006

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: 3-SIP

Description

Bipolar (BJT) Transistor NPN 20 V 700 mA 55MHz 1 W Through Hole 3-SIP

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 700 mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V
Frequency - Transition: 55MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bag
Package / Case: 3-SIP
Power - Max: 1 W
Series: -
Supplier Device Package: 3-SIP
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 20 V