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NTE30 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE30

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor PNP 80 V 50 A 2MHz 300 W Through Hole TO-3

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
50 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 25A, 2V
Frequency - Transition
2MHz
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bag
Package / Case
TO-204AA, TO-3
Power - Max
300 W
Series
-
Supplier Device Package
TO-3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
5V @ 10A, 50A
Voltage - Collector Emitter Breakdown (Max)
80 V

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