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Product details

NTE24

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 80 V 1 A 50MHz 850 mW Through Hole TO-237

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 1 A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Frequency - Transition: 50MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bag
Package / Case: TO-237AA
Power - Max: 850 mW
Series: -
Supplier Device Package: TO-237
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 80 V