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NTE164 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE164

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor NPN 700 V 1 A 3MHz 50 W Through Hole TO-3

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 2A, 15V
Frequency - Transition
3MHz
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bag
Package / Case
TO-204AA, TO-3
Power - Max
50 W
Series
-
Supplier Device Package
TO-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
8.5V @ 600mA, 2A
Voltage - Collector Emitter Breakdown (Max)
700 V

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