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NTE16007 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE16007

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-8

Description

Bipolar (BJT) Transistor NPN 55 V 3 A 25 W Through Hole TO-8

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 750mA, 4V
Frequency - Transition
-
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C
Package
Bag
Package / Case
TO-233AA, TO-8-3 Metal Can
Power - Max
25 W
Series
-
Supplier Device Package
TO-8
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
750mV @ 40mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
55 V

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