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NTE16005 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE16005

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39

Description

Bipolar (BJT) Transistor NPN 75 V 2 A 10 W Through Hole TO-39

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 500mA, 4V
Frequency - Transition
-
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bag
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
10 W
Series
-
Supplier Device Package
TO-39
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
75 V

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