Skip to main content
Dechoele
Prepare BOM Enquiry Request a Quote
NTE52 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE52

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor NPN 450 V 5 A 125 W Through Hole TO-3

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
5 A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 3A, 5V
Frequency - Transition
-
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bag
Package / Case
TO-204AA, TO-3
Power - Max
125 W
Series
-
Supplier Device Package
TO-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max)
450 V

Continue browsing

These products share the same category. Suitability must be confirmed independently.

14-3459 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Plymouth

14-3459