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NTE160 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE160

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - RF
Package
TO-72

Description

RF Transistor PNP 20V 10mA 700MHz 60mW Through Hole TO-72

Specifications
Current - Collector (Ic) (Max)
10mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2mA, 10V
Frequency - Transition
700MHz
Gain
14dB
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Noise Figure (dB Typ @ f)
5dB @ 800MHz
Operating Temperature
90°C (TJ)
Package
Bag
Package / Case
TO-206AF, TO-72-4 Metal Can
Power - Max
60mW
Series
-
Supplier Device Package
TO-72
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
20V