NTE16001 product image

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Product details

NTE16001

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: 3-SIP

Description

Bipolar (BJT) Transistor NPN 35 V 50 mA 500MHz 600 mW Through Hole 3-SIP

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 50 mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Frequency - Transition: 500MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bag
Package / Case: 3-SIP
Power - Max: 600 mW
Series: -
Supplier Device Package: 3-SIP
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max): 35 V