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NTE306 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTE306

Availability on request

Manufacturer
NTE Electronics, Inc
Category
Transistors - Bipolar (BJT) - Single
Package
TO-202

Description

Bipolar (BJT) Transistor NPN 50 V 1.5 A 950 mW Through Hole TO-202

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
1.5 A
Current - Collector Cutoff (Max)
200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
98 @ 100mA, 2V
Frequency - Transition
-
Mfr
NTE Electronics, Inc
Mounting Type
Through Hole
Operating Temperature
-50°C ~ 150°C (TJ)
Package
Bag
Package / Case
TO-202 Long Tab
Power - Max
950 mW
Series
-
Supplier Device Package
TO-202
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50 V

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