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PHE13007,127 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PHE13007,127

Availability on request

Manufacturer
WeEn Semiconductors
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220AB

Description

Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220AB

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
PHE13
Current - Collector (Ic) (Max)
8 A
Current - Collector Cutoff (Max)
200µA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A, 5V
Frequency - Transition
-
Mfr
WeEn Semiconductors
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power - Max
80 W
Series
-
Supplier Device Package
TO-220AB
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
350mV @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max)
400 V

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