Renesas Electronics America Inc
Product image not available
Product details
PDTC123EK,115
Availability on request
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount SMT3; MPAK
Datasheet
Not provided
Specifications
- Base Product Number
- PDTC12
- Current - Collector (Ic) (Max)
- 100 mA
- Current - Collector Cutoff (Max)
- 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 20mA, 5V
- Mfr
- NXP USA Inc.
- Mounting Type
- Surface Mount
- Package
- Tape & Reel (TR)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Power - Max
- 250 mW
- Resistor - Base (R1)
- 2.2 kOhms
- Resistor - Emitter Base (R2)
- 2.2 kOhms
- Series
- -
- Supplier Device Package
- SMT3; MPAK
- Transistor Type
- NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V