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Product details

CP147-MJ11016-CT

Availability on request

Manufacturer
Central Semiconductor Corp
Category
Transistors - Bipolar (BJT) - Single
Package
Die

Description

Bipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Surface Mount Die

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
30 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A, 5V
Frequency - Transition
4MHz
Mfr
Central Semiconductor Corp
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Tape & Reel (TR)
Package / Case
Die
Power - Max
200 W
Series
-
Supplier Device Package
Die
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Voltage - Collector Emitter Breakdown (Max)
120 V

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