MPSA06,116 product image

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Product details

MPSA06,116

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)

Description

Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3

Datasheet Not provided

Specifications

Base Product Number: MPSA06
Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 625 mW
Series: -
Supplier Device Package: TO-92-3
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 80 V