onsemi
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Product details
PN100
Availability on request
Description
Bipolar (BJT) Transistor NPN 45 V 500 mA 250MHz 625 mW Through Hole TO-92-3
Datasheet
Not provided
Specifications
- Current - Collector (Ic) (Max)
- 500 mA
- Current - Collector Cutoff (Max)
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA, 5V
- Frequency - Transition
- 250MHz
- Mfr
- Fairchild Semiconductor
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max
- 625 mW
- Series
- -
- Supplier Device Package
- TO-92-3
- Transistor Type
- NPN
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 20mA, 200mA
- Voltage - Collector Emitter Breakdown (Max)
- 45 V