2SC3585-T1B-A product image

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Product details

2SC3585-T1B-A

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT23-3 (TO-236)

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Gain: 9dB
Mfr: Renesas Electronics America Inc
Mounting Type: Surface Mount
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200mW
Series: -
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V